ZXMN7A11G
70V N-channel enhancement mode MOSFET
Summary
VDSS=70V : RDS(on)=0.13⍀ ID=3.8A
Description
This new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.
Features
•••••
Low on-resistanceFast switching speed Low thresholdLow gate driveSOT223 package
DGSApplications
•••••
DC-DC converters
Power management functionsDisconnect switchesMotor control
Class D audio output stages
Ordering information
Device
ZXMN7A11GTAZXMN7A11GTC
Reel size(inches)
713
Tape width(mm)
1212
Quantity per reel
1,0004,000
Device marking
ZXMN7A11
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
1www.zetex.com
http://oneic.com/
ZXMN7A11G
Absolute maximum ratings
Parameter
Drain-source voltageGate-source voltageContinuous drain current
@ VGS=10V; TA=25°C(b) @ VGS=10V; TA=70°C(b) @ VGS=10V; TA=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)Pulsed source current (body diode)(c)Power dissipation at TA =25°C (a)Linear derating factor
Power dissipation at TA =25°C(b) Linear derating factor
Operating and storage temperature range
IDMISISMPDPDTj, TstgSymbolVDSSVGSID
Limit70±203.83.02.7105102163.931-55 to +150
UnitVVAAAAAAWmW/°CWmW/°C°C
Thermal resistance
Parameter
Junction to ambient(a) Junction to ambient(b)
SymbolR⍜JAR⍜JA
Limit62.532
Unit°C/W°C/W
NOTES:
(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still airconditions.
(b)For a device surface mounted on FR4 PCB measured at t Յ 5 sec.
(c)Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junctiontemperature.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
2www.zetex.com
http://oneic.com/
ZXMN7A11G
Characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
3www.zetex.com
http://oneic.com/
ZXMN7A11G
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
ParameterStatic
Drain-source breakdown voltage
V(BR)DSS
70
1100
1.0
0.130.19
4.6629835211.9211.55.84.357.41.061.80.8519.814
0.95
VAnAV⍀⍀SpFpFpFnsnsnsnsnCnCnCnCVnsnC
VDS= 35V, VGS= 5VID= 4.4A
VDS=35V, VGS= 10VID= 4.4A
VDD= 35V, ID= 1ARG≅6.0⍀, VGS= 10VVDS= 40V, VGS=0Vf=1MHz
ID= 250A, VGS=0VVDS= 70V, VGS=0VVGS=±20V, VDS=0VID= 250A, VDS=VGSVGS= 10V, ID= 4.4AVGS= 4.5V, ID = 3.8AVDS= 15V, ID= 4.4A
Symbol
Min.
Typ.
Max.
Unit
Conditions
Zero gate voltage drain currentIDSSGate-body leakageIGSSGate-source threshold voltageStatic drain-source on-state resistance (*)
VGS(th)RDS(on)
Forward transconductance(*)(‡) gfsDynamic(‡)Input capacitanceOutput capacitance
Reverse transfer capacitanceSwitching (†)(‡)Turn-on-delay timeRise time
Turn-off delay timeFall time
Total gate chargeTotal gate chargeGate-source chargeGate drain chargeSource-drain diodeDiode forward voltage(*)Reverse recovery time (‡) Reverse recovery charge(‡)
VSDtrrQrrtd(on)tr td(off)tfQgQgQgsQgdCissCossCrss
Tj=25°C, IS= 2.5A, VGS=0V
Tj=25°C, IS= 2.5A,di/dt=100A/s
NOTES:
(*)Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.(†)Switching characteristics are independent of operating junction temperature.(‡)For design aid only, not subject to production testing.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
4www.zetex.com
http://oneic.com/
ZXMN7A11G
Typical characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
5www.zetex.com
http://oneic.com/
ZXMN7A11G
Typical characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
6www.zetex.com
http://oneic.com/
ZXMN7A11G
Intentionally left blank
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
7www.zetex.com
http://oneic.com/
ZXMN7A11G
Package outline - SOT223
DIMAA1bb2CD
MillimetersMin-0.020.662.900.236.30
Max1.800.100.843.100.336.70
-
InchesMin0.00080.0260.1140.0090.248
Max0.0710.0040.0330.1220.0130.2
DIMee1EE1L-
MillimetersMin
Max
2.30 BSC4.60 BSC6.703.300.90-7.303.70--
InchesMin
Max
0.0905 BSC0.181 BSC0.20.1300.355-0.2870.146--
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Zetex GmbH
Streitfeldstraße 19D-81673 MünchenGermany
Telefon: (49) 45 49 49 0Fax: (49) 45 49 49 49europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial HighwayHauppauge, NY 11788USA
Telephone: (1) 631 360 2222Fax: (1) 631 360 8222usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1Hing Fong Road, Kwai FongHong Kong
Telephone: (852) 26100 611Fax: (852) 24250 494asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, ChaddertonOldham, OL9 9LLUnited Kingdom
Telephone: (44) 161 622 4444Fax: (44) 161 622 4446hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied orreproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.Issue 1 - March 2006
© Zetex Semiconductors plc 2006
8www.zetex.com
http://oneic.com/
分销商库存信息:
DIODES
ZXMN7A11GTA