专利内容由知识产权出版社提供
专利名称：A METHOD FOR IMPROVING WAFER
PERFORMANCE FOR PHOTOVOLTAICDEVICES
发明人：CIESLA, Alison,HALLAM, Brett Jason,CHAN,
Catherine Emily,CHONG, Chee Mun,CHEN,Daniel,BAGNALL, Darren,PAYNE, DavidNeil,MAI, Ly,ABBOTT, Malcolm David,KIM,Moonyong,CHEN, Ran,WENHAM, StuartRoss,FUNG, Tsun Hang,SHI, Zhengrong
申请号：EP17874819.0申请日：20171122公开号：EP3545544A1公开日：20191002
摘要：The present disclosure is directed to a method for processing a silicon waferthat allows improving performance by exploiting the properties of crystallographicimperfections. The method comprises the steps of: forming a silicon layer withcrystallographic imperfections in the proximity of a surface of the silicon; exposing atleast a portion of the device to hydrogen atoms in a manner such that hydrogen atomsmigrate towards the region with crystallographic imperfections and into the silicon alongthe crystallographic imperfections; and controlling the charge state of hydrogen atomslocated at the crystallographic imperfections to be positive when the imperfections are ina p-type region of the wafer; and negative when the imperfections are at an n-type regionof the wafer by thermally treating the silicon while exposing the silicon to an illumination
intensity of less than 10 mW/cm2.
申请人：Newsouth Innovations Pty Limited
地址：Rupert Myers Building Gate 14 Barker Street UNSW Sydney, New South Wales2052 AU
国籍：AU
代理机构：Gulde & Partner
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