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专利名称：Method for the growth of large single
crystals
发明人：Vichr, Miroslav,Hoover, David Samuel申请号：EP96108490.2申请日：19960528公开号：EP0745707B1公开日：20010711
摘要：A method is disclosed for producing large single crystals. According to theinitial steps of this method, a plurality of single crystal wafers are crystallographicallyoriented to form a seed plate which is patterned. The patterned seed plate is selectivelyetched to expose the bare surface of the seed plate. The exposed, patterned baresurface of the seed plate is etched to form a plurality of nucleation structures. Each ofthe nucleation structures protrude outwardly from the underlying surface of the seedplate and provide ideal structures for the growth of large, single crystals. The resultinglarge, single crystals can be separated from the seed crystals by etching, physical orchemical means.
申请人：AIR PROD & CHEM
地址：US
国籍：US
代理机构：Kador & Partner
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