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专利名称：METHODS AND SYSTEMS FOR
IMPLEMENTING AN SCR TOPOLOGY IN AHIGH VOLTAGE SWITCHING CIRCUIT
发明人：Jin Zhang申请号：US13420003申请日：20120314
公开号：US20130241628A1公开日：20130919
专利附图：
摘要：In accordance with an embodiment, a high voltage switching and control circuitfor an implantable medical device (IMD) is provided that comprises a high voltage
positive (HVP) node configured to receive a positive high voltage signal from a highenergy storage source; and a high voltage negative (HVN) node configured to receive anegative high voltage signal from a high energy storage source. First and second outputterminals are configured to be connected to electrodes for delivering high voltageenergy. First and second Silicon Controlled Rectifiers (SCR) switches are connected to theHVP node, the first and second SCR switches connected to the first and second outputterminals respectively, wherein the first and second SCR switches each include aDarlington transistor pair having a first transistor stage joined to a second stagetransistor at a common collector node.
申请人：Jin Zhang
地址：Porter Ranch CA US
国籍：US
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